飞秒激光场中原子所受光学偶极力研究

通过求解全波矢布洛赫方程研究了两能级原子与飞秒超快激光脉冲的相互作用过程,计算了不同拉比频率取值下原子所受光学偶极力和粒子数布居随时间的演化情况,分析了光场失谐量对光学势分布情况的影响.研究发现:由飞秒激光场产生的横向光力的时间平均值并不等于零,而是随着拉比频率的增加呈现振荡的增大趋势;纵向光力的时间平均作用也并非是拉比频率的单调函数,而是随着拉比频率的增加呈现周期性的振荡分布特性;光学势的分布对光场的失谐量具有明显的依赖性,随着失谐量的变化,光学势的性质也随之发生了改变.     

三氯一氟甲烷分子在辐射场中的光谱性质与解离特性研究

采用B3LYP/6-311++g(3df,3pd)方法和基组对氟利昂物质CFC-11 (CFCl_3)分子进行了一系列的理论研究.包括了该分子的基态结构、电偶极矩、总能量、最高占据分子轨道能级E_H和最低未占据分子轨道能级E_L、能隙、红外与拉曼光谱性质、C-F键解离,并探讨电场对该分子的影响.结果表明:基态结构优化后的理论计算值和实验值的最大误差低于2%,C-F键受电场强度的增大而被拉长,能隙E_g随E_H和E_L的变化出现先增大后减小;电场影响着CFC-11分子的红外与拉曼光谱吸收强度,红外与拉曼光谱随着电场变化出现红移或蓝移现象.电场可作为一种辅助手段对其重叠或准重叠谱线进行分离.势阱深度随反向电场逐渐增大而减小,直至消失,使得C-F键的束缚能力逐渐减弱.本文有望为实现CFC-11分子最终发生解离而降解提供一种可行有效的调控手段.     

洛仑兹破缺标量场的霍金隧穿辐射

把洛仑兹破缺的标量场方程推广到弯曲时空中,并通过Aether-like项对标量场方程进行修正,该项所产生的效应也会影响到黑洞时空视界附近处的物理效应.接着,进一步在半经典近似下得到了修正的Hamilton-Jacobi方程,然后用这一修正的Hamilton-Jacobi方程研究了史瓦西黑洞的隧穿辐射特征,并讨论了洛仑兹破缺对黑洞霍金辐射和黑洞熵的影响.结果表明,u~α=δ_t~αu~t,δ_r~αu~r形式的Aether-like项的效应可能使黑洞温度增加,而黑洞熵降低.该工作可以帮助我们更深刻地理解弯曲时空中的洛仑兹破缺效应的物理性质.     

Junction configurations and their impacts on Cu(In,Ga)Se2 based solar cells performances

One dimension solar cells simulator package (SCAPS) is used to study the possibility of carrying out thin CIGS solar cells with high and stable efficiency. In the first step, we modified the conventional ZnO:B/i-ZnO/CdS/SDL/CIGS/Mo structure by substituting the SDL layer with the P?+?layer, having a wide bandgap from 1 to l.12?eV. Then, we simulated the J-V characteristics of this new structure and showed how the electrical parameters are affected. Conversion efficiency of 18.46% is founded by using 1.1?μm of P?+?layer thickness. Secondly, we analyze the effect of increase thickness and doping density of CIGS, CdS and P?+?layers on the electric parameters of this new structure. We show that only the short-circuit current density (J_SC) and efficiency are improved, reaching respectively 34.68?mA/cm² and 18.85%, with increasing of the acceptors density. Finally, we introduced 10?nm of various electron reflectors at the CIGS/Mo interface in the new structure to reduce the recombination of minority carriers at the back contact. High conversion efficiency of 23.34% and better stability are obtained when wide band-gap BSF is used.     

Cavity-enhanced absorption spectroscopy for shocktubes: Design and optimization

Cavity-enhanced absorption spectroscopy (CEAS) has generated much interest in shocktube kinetics studies because of its recent success in achieving improved sensitivity and high time resolution with robust optical alignment. While recent progress demonstrated experimental schemes including off-axis scanned-wavelength approach and on-axis ps-pulsed laser approach, that both successfully suppressed the laser-cavity coupling noise, this paper develops a theoretical model to predict the CEAS sensor performance that can be used as a design tool applicable to more generalized cases. The method models the optical field in the cavity based on the decentered Gaussian beam model, from which the cavity transmission spectrum and the laser-cavity coupling noise can be numerically calculated. The simulation results predict sensor performance for different cavity configurations and laser characteristics, including various degrees of laser-cavity mode-matching, laser linewidths, scanning rates, and cavity filling conditions. Simulation with example wavelengths in the ultraviolet, near-infrared, and mid-infrared showed increasing mode-matched beam waist size for increasing wavelengths. An off-axis alignment scheme was found to be capable of suppressing the coupling noise by two orders-of-magnitude at a moderate laser linewidth of 1?GHz. Coupling noise level on the order of 1e-5 for scanned-wavelength off-axis alignment case with a narrowband mid-infrared laser was obtained by model calculation and agreed with experimental results within acceptable uncertainty range. The developed method can serve to guide future design and optimization of CEAS system in shocktube studies.     

Multiple Scattering Between Adjacent Sound Sources in Head-Related Transfer Function Measurement System

To accelerate head-related transfer functions (HRTFs) measurement, two or more independent sound sources are usually employed in the measurement system. However, the multiple scattering between adjacent sound sources may influence the accuracy of measurement. On the other hand, the directivity of sound source could induce measurement error. Therefore, a model consisting of two spherical sound sources with approximate omni-directivity and a rigid-spherical head is proposed to evaluate the errors in HRTF measurement caused by multiple scattering between sources. An example of analysis using multipole re-expansion indicates that the error of ipsilateral HRTFs are within the bound of ± 1.0 dB below a frequency of 20 kHz, provided that the sound source radius does not exceed 0.025 m, the source distance relative to head center is not less than 0.5 m, and the angular interval between two adjacent sources is not less than 20 degrees. Similar conclusions under different conditions can also be analyzed and discussed by using this calculation method. Furthermore, the results are verified by measurements of HRTFs for a rigid sphere and a KEMAR artificial head.     

A theoretical study on tuning band gaps of monolayer and bilayer SnS2 and SnSe2 under external stimuli

Based on density functional theory, we systematically study the mechanical and electronic properties of monolayer and bilayer SnS₂ and SnSe₂. The electronic properties of these layers can be significantly tuned by applying in-plane strains and electric fields perpendicular to the sheets. The band gaps of monolayer SnS₂ and SnSe₂ slightly increase with the in-plane tensile strains, and they start to decrease after critical strains (5% for monolayer SnS₂ and 7% for monolayer SnSe₂). The band gaps of bilayer SnS₂ and SnSe₂ have a similar tendency to the monolayers with smaller critical strains (1% for bilayer SnS₂ and 2% for bilayer SnSe₂), which enables a semiconductor-to-metal transition at 10% strain for bilayer SnSe₂. We also find that an external electric field perpendicular to bilayer SnS₂ and SnSe₂ modulates their electronic band gaps. Semiconductor-to-metal transitions are achieved at the electric fields of 0.27 V/Å for bilayer SnS₂ and 0.13 V/Å for bilayer SnSe₂.     

Structure and reaction dynamics of SHE Z = 130

This study investigates the structural properties of super-heavy nuclei with Z = 130 by adopting the relativistic mean-field(RMF) theory within an axially deformed oscillator basis with the NL3 force parameter set. We study the binding energies, quadrupole deformation, nuclear radii, neutron separation energies, and other bulk properties.Moreover, we analyze the favorable decay modes for clear cognitive content of nuclei, such as alpha decay, using different formulae including the Viola-Seaberg, analytical formula of Royer, universal curve formula, and universal decay law. We compare these with the corresponding fission process. The spontaneous fission of super-heavy nuclei is studied with Z = 130 within the mass region 310 ≤A≤340. The results exhibit good agreement with finite range droplet model(FRDM) data. This formalism presents a significant step forward in the study of the structure and decay modes of the isotopes of Z = 130. With this appraisal, we investigate the possible shell/sub-shell closure for super-heavy nuclei adjacent by decay chains of alpha and other radioactive decay particles.     

Evidence of anisotropic Landau level splitting in topological semimetal ZrSiS under high magnetic fields

Magneto-transport study has been performed in topological semimetal ZrSiS single crystals under high pulsed magnetic fields. Obvious dependence of Landau level splitting on temperature and angular was investigated. The strong three-dimensional anisotropic nature of Landau level splitting under high pulsed magnetic fields was revealed by the angular dependent measurements, in which the orbital contribution is more dominant than Zeeman splitting. Our studies provide more insights into the physical properties of topological semimetals ZrSiS and shed light on future spintronic applications of ZrSiS.